c-Si Solar Cells: Physics and Technology

This chapter presents the main stream technology of c-Si solar cells. It explores development in design and technology of the c-Si solar cells from traditional to advanced device architecture. It highlights the historical development in cell design and technology along with the technological approach which are being researched for next generation c-Si solar cells. Starting from most general cell architecture to complex architecture design, like HIT and PERL cells, has been covered. In this chapter, both monoas well as multi c-Si wafer-based cells and their development have been discussed along with the manufacturing process sequence which is widely followed. Some basics on solar cell performance and corresponding cell performance tracking parameters like open circuit voltage, short circuit current, maximum power point, FF, Efficiency, EQE and IQE, etc., and their interdependence has also been discussed. Toward the end of the chapter, International Technology Roadmap for Photovoltaic (ITRPV) has been introduced. Also, discussion on next-generation c-Si wafer-based solar cells technology has been done highlighting the complications and importance of study on advanced light trapping in such structures.